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Volumn 43, Issue 8 A, 2004, Pages 5262-5268

Improvement in photoluminescence efficiency of GaInNAs/GaAs quantum wells grown by metalorganic chemical vapor deposition for low-threshold 1.3 μm range lasers

Author keywords

GaAs; GaInNAs; Laser; MOCVD; Quantum well

Indexed keywords

LASER APPLICATIONS; LASER BEAMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; NITROGEN; OPTIMIZATION; PHOTOLUMINESCENCE; QUALITY CONTROL; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE DISTRIBUTION;

EID: 6344240867     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.5262     Document Type: Article
Times cited : (5)

References (33)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.