Effects of thermal annealing procedure and a strained intermediate layer on a highly-strained GaInNAs/GaAs double-quantum-well structure

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 491-495

  Kitatani, T ^a   Kondow, M ^a   Tanaka, T ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BEAM EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS;

GALLIUM INDIUM NITROGEN ARSENIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034510470     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00750-8     Document Type: Article

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