GaInNaS intermediate layer for improvement of lasing characteristics of GaInNaS quantum well lasers

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 4 A, 2004, Pages

  Kawaguchi, Masao ^a   Miyamoto, Tomoyuki ^a   Saitoh, Atsushi ^a   Koyama, Fumio ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

GaInNAs; IML; Semiconductor laser

Indexed keywords

ANNEALING; CRYSTAL LATTICES; LIGHT REFLECTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS;

EMISSION EFFICIENCY; FLOW RATES; GAINNAS; INTERMEDIATE LAYERS (IML);

QUANTUM WELL LASERS;

EID: 2942627904     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l453     Document Type: Article

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