Room-temperature pulsed operation of triple-quantum-well GaInNAs lasers grown on misoriented GaAs substrates by MOCVD

IEEE Photonics Technology Letters

Volumn 11, Issue 10, 1999, Pages 1208-1210

  Hains, C P ^a   Li, N Y ^a   Yang, K ^a   Huang, X D ^a   Cheng, Julian ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

CURRENT CONFINEMENT; THRESHOLD CURRENT;

QUANTUM WELL LASERS;

EID: 0033204525     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.789693     Document Type: Article

References (10)

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10. J. Cheng, N. Y. Li, C. P. Hains, and K. Yang, "Multi-quantum well GaInNAs/GaAs lasers with low threshold current density grown by MOCVD," IEEE Device Research Conf., Santa Barbara, CA, 1999.