In situ annealing of GaInNAs up to 600°C

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 1, 2001, Pages 108-109

  Kondow, M ^a   Kitatani, T ^a  

^a HITACHI LTD   (Japan)

Author keywords

Crystallinity; GaInNAs; In situ annealing; Solid source molecular beam epitaxy

Indexed keywords

ANNEALING; CURRENT DENSITY; DEGRADATION; HIGH TEMPERATURE EFFECTS; LUMINESCENCE OF SOLIDS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR LASERS; THERMODYNAMIC STABILITY;

THERMAL CLEANING;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0035065075     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.40.108     Document Type: Article

References (10)