Understanding the frequency- and time-dependent behavior of ballistic carbon-nanotube transistors

IEEE Transactions on Nanotechnology

Volumn 8, Issue 2, 2009, Pages 234-244

  Paydavosi, Navid ^a   Holland, Kyle Dzavid ^a   Zargham, M Meysam ^a   Vaidyanathan, Mani ^a  

^a UNIVERSITY OF ALBERTA   (Canada)

Author keywords

Carbon nanotube (CN) transistor; Carbon nanotube field effect transistor (CNFET); Carbon nanotube transistor; CNFET; High frequency behavior; Radio frequency behavior; Time dependent transport; Two port parameters

Indexed keywords

BALLISTICS; BOLTZMANN EQUATION; CRYSTAL RESONATORS; FIELD EFFECT TRANSISTORS; NANOSENSORS; NANOTUBES; NICKEL COMPOUNDS; POISSON EQUATION;

CNFET; HIGH-FREQUENCY BEHAVIOR; RADIO-FREQUENCY BEHAVIOR; TIME-DEPENDENT TRANSPORT; TWO-PORT PARAMETERS;

CARBON NANOTUBES;

EID: 62449294431     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2008.928829     Document Type: Article

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