Method for predicting f T for carbon nanotube FETs

IEEE Transactions on Nanotechnology

Volumn 4, Issue 6, 2005, Pages 699-704

  Castro, Leonardo C ^b   John, D L ^a,b   Pulfrey, D L ^a,b,e   Pourfath, Mahdi ^c   Gehring, Andreas ^a,d   Kosina, Hans ^a,c,f  

^a IEEE   (Canada)

^b UNIVERSITY OF BRITISH COLUMBIA   (Canada)

^c INSTITUTE FOR MICROELECTRONICS   (Austria)

^d IBM MICROELECTRONICS   (United States)

^e Canadian Academy of Engineering   (United Kingdom)

^f Institute for Microelectronics   (Austria)

Author keywords

Carbon nanotube transistors; Field effect transistors (FETs); Nanotechnology; Quantum effect semiconductor devices; Quantum wires; Semiconductor device modeling; Small signal analysis

Indexed keywords

CARBON NANOTUBE TRANSISTORS; QUANTUM EFFECT SEMICONDUCTOR DEVICES; SEMICONDUCTOR DEVICE MODELING; SMALL-SIGNAL ANALYSIS;

CAPACITANCE; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; NANOTECHNOLOGY; NETWORKS (CIRCUITS); POISSON DISTRIBUTION; SEMICONDUCTOR QUANTUM WIRES; TRANSCONDUCTANCE;

CARBON NANOTUBES;

EID: 28444471666     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2005.858603     Document Type: Article

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