A three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry

IEEE Transactions on Electron Devices

Volumn 53, Issue 8, 2006, Pages 1782-1788

  Fiori, Gianluca ^a   Iannaccone, Giuseppe ^a   Klimeck, Gerhard ^b  

^a UNIVERSITY OF PISA   (Italy)

^b PURDUE UNIVERSITY   (United States)

Author keywords

Ballistic transport; Carbon nanotubes (CNTs); Nonequilibrium Green's function (NEGF); Technology computer aided design (CAD)

Indexed keywords

BOUNDARY CONDITIONS; CARBON NANOTUBES; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; DIELECTRIC MATERIALS; DOPING (ADDITIVES); GATES (TRANSISTOR); GREEN'S FUNCTION;

BALLISTIC TRANSPORT; NONEQUILIBRIUM GREEN'S FUNCTION (NEGF); TECHNOLOGY COMPUTER-AIDED DESIGN (CAD);

FIELD EFFECT TRANSISTORS;

EID: 33746652180     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.878018     Document Type: Article

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