Dependence of DC characteristics of CNT MOSFETs on bandstructure models

IEEE Transactions on Nanotechnology

Volumn 5, Issue 4, 2006, Pages 368-372

  Koswatta, Siyuranga O ^b   Neophytou, Neophytos ^a,b   Kienle, Diego ^b   Fiori, Gianluca ^c   Lundstrom, Mark S ^a,b  

^a IEEE

^b Purdue University   (United States)

^c UNIVERSITY OF PISA   (Italy)

Author keywords

Bandstructure; Boltzmann transport; Carbon nanotube (CNT) field effect transistors (CNT MOSFETs); Nonequilibrium Green's function (NEGF); Semiclassical

Indexed keywords

BAND STRUCTURE; CARBON NANOTUBES; COMPUTER SIMULATION; ELECTRONIC STRUCTURE; GREEN'S FUNCTION; QUANTUM THEORY;

BOLTZMANN TRANSPORT; CARBON NANOTUBE (CNT) FIELD-EFFECT TRANSISTORS (CNT MOSFETS); NONEQUILIBRIUM GREEN'S FUNCTION (NEGF); SEMICLASSICAL;

MOSFET DEVICES;

EID: 33746271571     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2006.876916     Document Type: Article

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