Intrinsic current gain cutoff frequency of 30 GHz with carbon nanotube transistors

Applied Physics Letters

Volumn 90, Issue 23, 2007, Pages

  Le Louarn, A ^a   Kapche, F ^a   Bethoux, J M ^a   Happy, H ^a   Dambrine, G ^a   Derycke, V ^b   Chenevier, P ^b   Izard, N ^b   Goffman, M F ^b   Bourgoin, J P ^b  

^a INSTITUT D ELECTRONIQUE   (France)

^b CEA SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; ELECTROPHORESIS; EQUIVALENT CIRCUITS; PARAMETER ESTIMATION;

EQUIVALENT CIRCUIT MODEL; INTRINSIC CURRENT;

FIELD EFFECT TRANSISTORS;

EID: 34250751792     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2743402     Document Type: Article

References (19)

1. D. J. Frank and J. Appenzeller, IEEE Electron Device Lett. 25, 34 (2004).
2. P. J. Burke, Solid-State Electron. 48, 1981 (2004).
3. S. Kim, T.-Y. Choi, L. Rabieirad, J.-H. Jeon, M. Shim, and S. Mohammadi, IEEE International Microwave Symposium Digest (IEEE, New York, 2005), p. 4.
4. S. Rosenblatt, H. Lin, V. Sazoneva, S. Tiwari, and P. L. McEuen, Appl. Phys. Lett. 87, 153111 (2005).
5. S. Li, Z. Yu, S.-F. Yen, W. C. Tang, and P. J. Burke, Nano Lett. 4, 753 (2004).
6. J.-M. Bethoux, H. Happy, G. Dambrine, V. Derycke, M. Goffman, and J.-P. Bourgoin, IEEE Electron Device Lett. 27, 681 (2006).
7. J.-M. Bethoux, H. Happy, A. Siligaris, G. Dambrine, J. Borghetti, V. Derycke, and J.-P. Bourgoin, IEEE Trans. Nanotechnol. 5, 335 (2006).
8. J.-M. Bethoux, H. Happy, G. Dambrine, V. Derycke, M. Goffman, and J.-P. Bourgoin, Mater. Sci. Eng., B 135, 294 (2006).
9. Z. Yu, C. Rutherglen, and P. Burke, Appl. Phys. Lett. 88, 233115 (2006).
10. X. Huo, M. Zhang, P. C. H. Chan, Q. Liang, and Z. K. Tang, IEEE IEDM Technical Digest (IEEE, New York, 2004), p. 691.
11. L. C. Castro and D. L. Pulfrey, Nanotechnology 17, 300 (2006).
12. R. Chau, S. Datta, M. Doczy, B. Doyle, B. Jin, J. Kavalieros, A. Majumdar, and M. Radosavljevic, IEEE Trans. Nanotechnol. 4, 153 (2005).
13. D. Akinwande, G. F. Close, and H.-S. P. Wong, IEEE Trans. Nanotechnol. 5, 599 (2006).
14. R. Krupke, S. Linden, M. Rapp, and F. Hennrich, Adv. Mater. (Weinheim, Ger.) 18, 1468 (2006).
15. A. R. Boccaccini, J. Cho, J. A. Roether, B. J. C. Thomas, E. J. Minay, and M. S. P. Shaffer, Carbon 44, 3149 (2006).
16. K. H. Choi, J.-P. Bourgoin, S. Auvray, D. Esteve, G. S. Duesberg, S. Roth, and M. Burghard, Surf. Sci. 462, 195 (2000).
17. E. Dujardin, V. Derycke, M. F. Goffman, R. Lef̀vre, and J.-P. Bourgoin, Appl. Phys. Lett. 87, 193107 (2005).
18. S. Auvray, V. Derycke, M. Goffman, A. Filoramo, O. Jost, and J.-P. Bourgoin, Nano Lett. 5, 451 (2005).
19. M. S. Arnold, A. A. Green, J. F. Hulvat, S. I. Stupp, and M. C. Hersam, Nature Nanotechnol. 1, 60 (2006), and references therein.