Carbon nanotube field-effect transistor operation at microwave frequencies

Applied Physics Letters

Volumn 88, Issue 11, 2006, Pages

  Pesetski, Aaron A ^a   Baumgardner, James E ^a   Folk, Erica ^a   Przybysz, John X ^a   Adam, John D ^a   Zhang, Hong ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE-BASED ELECTRONICS; MICROWAVE FREQUENCIES; QUARTZ SUBSTRATES;

CARBON NANOTUBES; ELECTRONIC EQUIPMENT; MICROWAVES; NATURAL FREQUENCIES; QUARTZ;

FIELD EFFECT TRANSISTORS;

EID: 33645136351     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2185007     Document Type: Article

References (27)

1. S. Iijima, Physica B 323, 1 (2002).
2. D. T. Colbert and R. E. Smalley, in Perspectives on Fullerene Nanotechnology, edited by Eiji Osawa, p. 3.
3. P. L. McEuen, M. S. Fuhrer, and H. Park, IEEE Trans. Nanotechnol. 1, 78 (2002).
4. T. Dürkop, S. A. Getty, E. Cobas, and M. S. Fuhrer, Nano Lett. 4, 35 (2004).
5. T. Dürkop, B. M. Kim, and M. S. Fuhrer, J. Phys.: Condens. Matter 16, R553 (2004).
6. P. J. Burke, Solid-State Electron. 48, 1981 (2004).
7. S. J. Tans, A. R. M. Verschueren, and C. Dekker, Nature (London) 393, 49 (1998).
8. J. Appenzeller, R. Martel, V. Derycke, M. Radosavljevi, S. Wind, D. Neumayer, and Ph. Avouris, Microelectron. Eng. 64, 391 (2002).
9. A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai, Nature (London) 424, 654 (2003).
10. E. S. Snow, J. P. Novak, P. M. Campbell, and D. Park, Appl. Phys. Lett. 82, 2145 (2003).
11. J. Chen, C. Klinke, A. Afzali, K. Chan, and Ph. Avouris, Proceedings of the 2004 International Electron Device Meeting, San Francisco, CA, 2004, p. 695.
12. S. Li, Z. Yu, and P. J. Burke, J. Vac. Sci. Technol. B 22, 3112 (2004).
13. Y. M. Lin, J. Appenzeller, and Ph. Avouris, Proceedings of the 2004 International Electron Device Meeting, San Francisco, CA, 2004, p. 687.
14. R. Seidel, A. P. Graham, E. Unger, G. S. Duesberg, M. Liebau, W Steinhoegl, F. Kreupl, W. Hoenlein, and W. Pompe, Nano Lett. 4, 831 (2004).
15. A. Javey, H. Kim, M. Brink, Q. Wang, A. Ural, J. Guo, P. Mcintyre, P. McEuen, M. Lundstrom, and H. Dai, Nat. Mater. 1, 241 (2002).
16. F. Nihey, H. Hongo, M. Yudasaka, and S. Iijima, Jpn. J. Appl. Phys., Part 1 41, 1049 (2002).
17. S. J. Wind, J. Appenzeller, R. Martel, V. Derycke, and Ph. Avouris, Appl. Phys. Lett. 80, 3817 (2002).
18. J. Appenzeller and D. J. Frank, Appl. Phys. Lett. 84, 1771 (2004).
19. X. Huo, M. Zhang, C. H. Chan, Q. Liang, and Z. K. Tang, Proceedings of the 2004 International Electron Device Meeting, San Francisco, CA, 2004, p. 691.
20. S. Li, Z. Yu, S. F. Yen, W. C. Tang, and P. J. Burke, Nano Lett. 4, 753 (2004).
21. D. V. Singh, K. A. Jenkins, J. Appenzeller, D. Neumayer, A. Grill, and H. S. P. Wong, IEEE Trans. Nanotechnol. 3, 383 (2004).
22. S. Rosenblatt, H. Lin, V. Sazonova, S. Tiwari, and P. L. McEuen, Appl. Phys. Lett. 87, 153111 (2005).
23. J. H. Hafner, M. J. Bronikowski, B. R. Azamian, P. Nikolaev, A. G. Rinzler, D. T. Colbert, and R. E. Smalley, Chem. Phys. Lett. 296, 195 (1998).
24. J. Kong, A. M. Cassell, and H. Dai, Chem. Phys. Lett. 292, 567 (1998).
25. W. Z. Li, J. G. Wen, Y. Tu, and Z. F. Ren, Appl. Phys. A: Mater. Sci. Process. 73, 259 (2001).
26. S. Huang, X. Cai, and J. Liu, J. Am. Chem. Soc. 125, 5636 (2003).
27. Q. Fu, S. Huang, and J. Liu, J. Phys. Chem. B 108, 6124 (2004).