Extrapolated fmax for carbon nanotube field-effect transistors

Nanotechnology

Volumn 17, Issue 1, 2006, Pages 300-304

  Castro, L C ^a   Pulfrey, D L ^a  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; ELECTRIC RESISTANCE; EXTRAPOLATION; FREQUENCIES; GATES (TRANSISTOR);

DEVICE DESIGN; GATE BIASES; OPERATING FREQUENCY;

FIELD EFFECT TRANSISTORS;

EID: 29144460960     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/1/051     Document Type: Article

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