Regional signal-delay analysis applied to high-frequency carbon nanotube FETs

IEEE Transactions on Nanotechnology

Volumn 6, Issue 6, 2007, Pages 711-716

  Pulfrey, D L ^a,b   Castro, L C ^c,d   John, D L ^a,e   Vaidyanathan, M ^a,f  

^a IEEE   (Canada)

^b UNIVERSITY OF BRITISH COLUMBIA   (Canada)

^c UBC ^*

^d QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

^e BANGOR UNIVERSITY   (United Kingdom)

^f UNIVERSITY OF ALBERTA   (Canada)

Author keywords

Carbon nanotube; Field effect transistors; High frequency; Signal delay

Indexed keywords

LOCAL SIGNAL VELOCITY; SIGNAL DELAY; SPACE-CHARGE REGIONS;

CARBON NANOTUBES; DOPING (ADDITIVES); ELECTRON TUNNELING; MODULATION; TIME DELAY;

FIELD EFFECT TRANSISTORS;

EID: 36349029785     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2007.907796     Document Type: Article

References (17)

1. A. Le Louarn et al., "Intrinsic current gain cutoff frequency of 30GHz with carbon nanotube transistors," Applied Phys. Lett., vol. 90, 233108, 2007.
2. Bipul C. Paul, Shinobu Fujita, Masaki Okajima, and Thomas Lee, "Impact of geometry-dependent parasitic capacitances on the performance of CNFET circuits," IEEE Electron Dev. Lett., vol. 27, no. 5, 380-382, 2006.
3. D.L. John and D.L. Pulfrey, "Switching-speed calculations for Schottky-barrier carbon nanotube field-effect transistors," J. Vac. Sci. Technol. A, vol. 24, 708-712, 2006.
4. J. Guo, A. Javey, H.Dai, and M. Lundstrom, "Performance analysis and design optimization of near-ballistic carbon nanotube field-effect transistors," IEDM Tech. Digest, 703-706, 2004.
5. H.F. Cooke, "Microwave transistors: theory and design," Proc. IEEE, vol. 59, 1163-1181, 1971.
6. W. Hafez and M. Feng, "Experimental demonstration of pseudomorphic bipolar transistors with cutoff frequencies above 600 GHz," Applied. Phys. Lett., vol. 86, 152101, 2005.
7. G. Fiori, G. Iannaccone, and G. Klimeck, "Performance of carbon nanotube field-effect transistors with doped source and drain extensions and arbitrary geometry," IEDM Tech. Digest, 522-525, 2005, and "A three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry," IEEE Trans. Elec. Dev., vol. 53, 1782-1788, 2006.
8. S. Hasan, S. Salahuddin, M. Vaidyanathan, and M.A. Alam, "High-frequency performance projections for ballistic carbonnanotube transistors," IEEE Trans. Nanotechnol., vol. 5, 14-22, 2006.
9. T," Proc. IEEE, vol. 57, 2159, 1969.
10. G. Fiori, G. Iannaccone, M.S. Lundstrom, and G. Klimeck, "Three-dimensional atomistic simulation of carbon nanotube FETs with realistic geometry," Proc. ESSDERC, 537-540, 2005.
11. D.L. John, L.C. Castro, P.J.S. Pereira, and D.L. Pulfrey, "A Schrödinger-Poisson solver for modeling carbon nanotube FETs," Tech. Proc. 2004 Nanotechnology Conf. and Trade Show, vol. 3, 281-286, 2004.
12. R. Venugopal, Z. Ren, and M.S. Lundstrom, "Simulating quantum transport in nanoscale MOSFETs: ballistic hole transport, subband engineering and boundary conditions," IEEE Trans. Nanotechnol., vol. 2, 135-143, 2003.
13. G. Fiori and G. Iannaccone, "Threshold voltage dispersion and impurity scattering limited mobility in carbon nanotube field-effect transistors with randomly doped reservoirs," Proc. ESSDERC, 202-205, 2006.
14. Y. Yoon, Y. Ouyang, and J. Guo, "Effect of phonon scattering on intrinsic delay and cut off frequency of carbon nanotube FETs", IEEE Trans. Elec. Dev., vol. 53, 2467-2470, 2006.
15. S.E. Laux and W. Lee, "Collector signal delay in the presence of velocity overshoot," IEEE Elec. Dev. Lett., vol. 11, 174-176, 1990.
16. P. Roblin and H. Rohdin, "High-speed heterostructure devices," Cambridge University Press, Sec. 15.4, 2002.
17. International Technology Roadmap for Semiconductors, 2006 update. Available online: [http://www.itrs.net/links/2006Update/FinalToPost/05_ Wireless2006Update.pdf]