SCOPUS 정보 검색 플랫폼

Electronics Letters

Volumn 41, Issue 5, 2005, Pages 280-282

Direct measurements of frequency response of carbon nanotube field effect transistors

(3) Singh, D V a Jenkins, K A a Appenzeller, J a

a IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CROSSTALK; FIELD EFFECT TRANSISTORS; FREQUENCY DOMAIN ANALYSIS; FREQUENCY RESPONSE; GATES (TRANSISTOR); PARAMETER ESTIMATION; SPURIOUS SIGNAL NOISE;

BALLISTIC ELECTRONIC TRANSPORT; FREQUENCY-DOMAIN MEASUREMENTS; INTRINSIC DEVICE CAPACITANCE; SILICON SUBSTRATES;

CARBON NANOTUBES;

EID: 15544387267 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:20057528 Document Type: Article

Times cited : (20)

References (7)

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2
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3
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- Logic circuits with carbon nanotube transistors
- Bachtold, A., Hadley, P., Nakanishi, T., and Dekker, C.: 'Logic circuits with carbon nanotube transistors', Science, 2001, 294, pp. 1317-1320
- (2001) Science , vol.294 , pp. 1317-1320
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4
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- Carbon nanotube transistor arrays for multistage complementary logic and ring oscillators
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5
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- High frequency response in carbon nanotube field-effect transistors
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- Frank, D.J.¹ Appenzeller, J.²

6
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- Frequency dependent characterization of transport properties in carbon nanotube transistors
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7
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- Frequency response of top-gated carbon nanotube field effect transistors
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.