Active properties of carbon nanotube field-effect transistors deduced from S parameters measurements

IEEE Transactions on Nanotechnology

Volumn 5, Issue 4, 2006, Pages 335-342

  Bethoux, Jean Marc ^a   Happy, Henri ^a   Siligaris, Alexandre ^a   Dambrine, Gilles ^a   Borghetti, J ^b   Derycke, Vincent ^b   Bourgoin, Jean Philippe ^b  

^a INSTITUT D ELECTRONIQUE   (France)

^b SERVICE DE PHYSIQUE DE L ETAT CONDENSÉ   (France)

Author keywords

Carbon nanotube field effect transistor (CNT FET); Device modeling; Microwave measurement

Indexed keywords

CARBON NANOTUBES; MICROWAVE MEASUREMENT; NETWORKS (CIRCUITS); SCATTERING PARAMETERS;

ACTIVE PROPERTIES; CARBON NANOTUBE FIELD-EFFECT TRANSISTOR (CNT-FET); DEVICE MODELING; INTRINSIC AC ELEMENTS;

FIELD EFFECT TRANSISTORS;

EID: 33746270175     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2006.876931     Document Type: Article

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