An 8-GHz ft carbon nanotube field-effect transistor for gigahertz range applications

IEEE Electron Device Letters

Volumn 27, Issue 8, 2006, Pages 681-683

  Bethoux, J M ^a   Happy, Henri ^a   Dambrine, G ^a   Derycke, V ^b   Goffman, M ^b   Bourgoin, J P ^b  

^a INSTITUT D ELECTRONIQUE   (France)

^b SERVICE DE PHYSIQUE DE L ETAT CONDENSÉ   (France)

Author keywords

Carbon nanotube field effect transistor (CNFET); Gigahertz; High frequency (HF)

Indexed keywords

CARBON NANOTUBES; DESIGN; ELECTRIC CURRENTS; OPTIMIZATION; SELF ASSEMBLY;

CARBON NANOTUBE FIELD-EFFECT TRANSISTOR (CNFET); CURRENT GAIN; GIGAHERTZ; HIGH FREQUENCY (HF);

FIELD EFFECT TRANSISTORS;

EID: 33746561310     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.879042     Document Type: Article

References (13)

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