The CD metrology perspectives and future trends

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7140, Issue , 2008, Pages

  Foucher, J ^a   Pargon, E ^b   Martin, M ^b   Farys, V ^c   Becu S ^a   Babaud, L ^b,c  

^a CEA LETI   (France)

^b CNRS   (France)

^c STMicro   (France)

Author keywords

[No Author keywords available]

Indexed keywords

32NM NODES; 3D METROLOGIES; ACCURATE MEASUREMENTS; CD CONTROLS; CD MEASUREMENTS; CD METROLOGIES; CURRENT LIMITATIONS; FUNDAMENTAL LIMITATIONS; FUTURE TRENDS; HIGH YIELDS; IN-PROCESS CONTROLS; INDUSTRIAL ENVIRONMENTS; PROCESS WINDOWS; REFERENCE TECHNIQUES; REFLECTOMETRY; SCATTEROMETRY; SEM; SEMICONDUCTOR INDUSTRIES; SIDE WALL ANGLES; THRESHOLD ALGORITHMS; THROUGH PITCHES;

DATA STORAGE EQUIPMENT; ELECTRIC CONDUCTIVITY; INDUSTRY; LITHOGRAPHY; MEASUREMENTS; SEMICONDUCTING INDIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR MATERIALS; STANDARDS; THREE DIMENSIONAL;

PROCESS CONTROL;

EID: 62449159159     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.805296     Document Type: Conference Paper

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