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Volumn 5038 II, Issue , 2003, Pages 892-900

Characterisation of 193nm resist layers by CD-SEM sidewall imaging

Author keywords

193nm resist; 3D profile reconstruction; CD metrology; CD SEM

Indexed keywords

ATOMIC FORCE MICROSCOPY; IMAGE PROCESSING; NANOTECHNOLOGY; SCANNING ELECTRON MICROSCOPY; SPATIAL VARIABLES MEASUREMENT; SURFACES; THREE DIMENSIONAL;

EID: 0141723579     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.482808     Document Type: Conference Paper
Times cited : (15)

References (10)
  • 8
    • 0037506799 scopus 로고    scopus 로고
    • Precision and accuracy of CD-SEM profile reconstruction for the 110 technology node
    • submitted for publication
    • T.Marschner and C.Stief, Precision and Accuracy of CD-SEM Profile Reconstruction for the 110 Technology Node, ASMC Conference 2003, IEEE Transactions, submitted for publication.
    • ASMC Conference 2003, IEEE Transactions
    • Marschner, T.1    Stief, C.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.