Quantification of CD SEM wafer global charging effect on CD and CD uniformity of 193 nm lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5375, Issue PART 1, 2004, Pages 173-182

  Ke, Chih Ming ^a   Hung, Hsueh Liang ^a   Chang, Anderson ^a   Chen, Jeng Horng ^a   Gau, Tsai Sheng ^a   Ku, Yao Ching ^a   Lin, Burn J ^a   Otaka, Tadashi ^b   Ueda, Kazuhiro ^b   Kawada, Hiroki ^b   Nomura, Hiroaki ^b   Ren, Nelson ^b  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^b HITACHI HIGH TECHNOLOGIES CORPORATION   (Japan)

Author keywords

193 nm; ArF resist; CD; CDU; Retarding voltage focus; Shrinkage; Wafer charging

Indexed keywords

ARF RESIST; CD; CDU; RETARDING VOLTAGE FOCUS; WAFER CHARGING;

ELECTRIC POTENTIAL; ERROR CORRECTION; EVALUATION; MEASUREMENT ERRORS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS;

MEASUREMENT THEORY;

EID: 4344703789     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.536147     Document Type: Conference Paper

References (3)

1. CMKe et al, "The Effect of Various ArF Resist Shrinkage Amplitude on CD Bias" SPIE 4689 (2002) p997
2. Takanori Kudo et al, "Mechanistic Studies on the CD Degradation of 193 nm Resists during SEM Inspection", Journal of Photopolymer Science and Technology, Vol. 14, 3, 2001, pp. 407-418
3. Yoichi Ose et al, "Correction Method for High-Precision CD-Measurements on Electrostatically Charged Wafers" SPIE 4689 (2002) p 128