Evaluation of CD-SEM measurement uncertainty using secondary electron simulation with charging effect

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6518, Issue PART 1, 2007, Pages

  Abe, Hideaki ^a   Hamaguchi, Akira ^a   Yamazaki, Yuichiro ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Accuracy; CD bias; CD SEM; Electron beam simulation; Precision

Indexed keywords

COMPUTER SIMULATION; ELECTRON BEAMS; LITHOGRAPHY; PROCESS CONTROL; SCANNING ELECTRON MICROSCOPY;

CHARGING EFFECTS; ELECTRON BEAM SIMULATION; SECONDARY ELECTRON SIMULATION;

UNCERTAINTY ANALYSIS;

EID: 35148816093     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.712191     Document Type: Conference Paper

References (4)

1. B. Banke, C. Archie, "Characteristics of accuracy for CD metrology", Proc. SPIE Vol. 3677, pp.291-308 (1999).
2. M. Sendelbach, C. Archie, "Scatterometry measurement precision and accuracy below 70 nm", Proc. SPIE Vol. 5038, pp.224-238 (2003).
3. J. Villarrubia, A. Vladar, "Dimensional metrology of resist lines using a SEM Model-Based library approach", Proc. SPIE Vol. 5375, pp. 199-209 (2004).
4. B. Bunday, J. Allgair, O. Adan, A. Tam, S. Latinski, G. Eytan, "Small feature accuracy challenge for CD-SEM metrology physical model solution", Proc. SPIE Vol. 6152, 61520S (2006)