Electron beam based modification of lithographic materials and the impact on critical dimensional metrology

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6152 II, Issue , 2006, Pages

  Marchman, H ^a,c   Lorusso, G F ^b   Soltz, D ^a   Grella, L ^a   Luo, Z ^a   Byers, J D ^b   Varner, J ^a   Vedula, S ^a   Kuppa, R ^a   Azordegan, A R ^a   Storms, G ^b   Leunissen, L H ^b  

^a KLA TENCOR CORPORATION   (United States)

^b IMEC   (Belgium)

^c PHOTRONICS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CDSEM MEASUREMENTS; ELECTRON BEAM INDUCED MODIFICATION; LITHOGRAPHIC PROCESS CONTROL; SPATIAL RESOLUTION;

DEPOSITION; LITHOGRAPHY; MEASUREMENTS; OPTICAL RESOLVING POWER; SCANNING ELECTRON MICROSCOPY;

ELECTRON BEAMS;

EID: 33745591084     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.656599     Document Type: Conference Paper

References (8)

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5. H Zhou et al., "Reducing CD-SEM Measurement Carryover Effect for 193nm Resist Process Using CEq" in Proceedings of Microlithography XVI2002 4689, 742
6. A Habermas, D Hong, M Ross, W Livesay, Proc. SPIE Vol. 4689, p. 92-101, Metrology, Inspection, and Process Control for Microlithography XVI, Daniel J. Herr; Ed.;
7. M. Nessier, T. Kocab, B. Beauchemin, T. Sarubbi, S. Wong, W. Ng, Proc. INTERFACE 2000 Microlithography Seminar, 233 (2000).
8. H Kim, et al, Advances in Resist Technology and Processing XX2003, 5039, 827