The role of AFM in semiconductor technology development: The 65 nm technology node and beyond

Progress in Biomedical Optics and Imaging - Proceedings of SPIE

Volumn 5752, Issue I, 2005, Pages 127-139

  Ukraintsev, Vladimir A ^a   Baum, Christopher ^a   Zhang, Gary ^a   Hall, Craig L ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

AFM; CD; Critical dimensions; Sample to sample bias variation; Total measurement uncertainty

Indexed keywords

CHEMICAL MECHANICAL POLISHING; INTEGRATED CIRCUITS; LIGHT SCATTERING; MEASUREMENT THEORY; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSMISSION ELECTRON MICROSCOPY;

AFM; CD; CRITICAL DIMENSIONS; SAMPLE-TO-SAMPLE BIAS VARIATION; TOTAL MEASUREMENT UNCERTAINTY;

ATOMIC FORCE MICROSCOPY;

EID: 24644454713     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.602758     Document Type: Conference Paper

References (18)

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2. The transistor designers usually use the "gate length" term for the gate CD or for the poly-Si line width and the "gate width" term for the third gate dimension along the gate or along the poly-Si line.
3. SEMI 1999. Document E89-0999 - Guide for Measurement System Capability Analysis.
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9. The best lifetime and XY resolution has been achieved with carbon nanotube probes. Silicon probes provide comparable resolution but have shorter lifetime.
10. Some progress on the nature of probe-to-sample interaction is definitely needed and long time expected. Our knowledge of physics and chemistry of probe-to-sample interaction is not adequate to the challenge CD AFM is facing.
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14. The Mandel regression analysis [12] has been used on the data presented in Fig. 14. Assuming TMU of the reference measurement system (CD AFM) of 2.0 nm (3σ) the TMU of the OCD equal to 1.45 nm (3σ) has been obtained. Using the OCD precision of 0.5 nm (3σ) bias variation of 1.36 nm (3σ) is calculated (cf. Table 1).
15. The impact of STI step height on gate CD is mainly due to consumption of gate lithography focus margin.
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