Superior hot carrier reliability of single halo (SH) silicon-on-insulator (SOI) nMOSFET in analog applications

IEEE Transactions on Device and Materials Reliability

Volumn 5, Issue 1, 2005, Pages 127-132

  Hakim, Najeeb Ud Din ^a   Rao, V Ramgopal ^b   Vasi, Juzer ^b   Woo, Jason C S ^c  

^a NATIONAL INSTITUTE OF TECHNOLOGY   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^c Engineering IV   (United States)

Author keywords

Channel hot carrier; Mixed signal applications; Silicon on insulator technology; Single halo; Thin film devices

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRIC RESISTANCE; HETEROJUNCTION BIPOLAR TRANSISTORS; MOSFET DEVICES; RELIABILITY; SILICON ON INSULATOR TECHNOLOGY; THIN FILM DEVICES; TRANSCONDUCTANCE;

ANALOG APPLICATIONS; CHANNEL HOT CARRIERS; MIXED SIGNAL APPLICATIONS; SINGLE HALO (SH);

HOT CARRIERS;

EID: 20444485784     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2005.843832     Document Type: Article

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