Influence of device engineering on the analog and RF performances of SOI MOSFETs

IEEE Transactions on Electron Devices

Volumn 50, Issue 3, 2003, Pages 577-588

  Kilchytska, Valeriya ^a   Nève, Amaury ^a   Vancaillie, Laurent ^a   Levacq, David ^a   Adriaensen, Stéphane ^a   Van Meer, Hans ^b,c   De Meyer, Kristin ^b,c   Raynaud, Christine ^d,e   Dehan, Morin ^a   Raskin, Jean Pierre ^a   Flandre, Denis ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^b IMEC   (Belgium)

^c Signal Processing and Data Analytics iMinds Future Health Department   (Belgium)

^d CEA LETI   (France)

^e STMICROELECTRONICS   (France)

Author keywords

Analog UHF circuits; MOSFET; Semiconductor device measurements; Silicon on insulator (SOI)

Indexed keywords

EQUIVALENT CIRCUITS; GATES (TRANSISTOR); ION IMPLANTATION; MICROWAVE AMPLIFIERS; SCATTERING PARAMETERS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; TRANSCONDUCTANCE;

FULLY DEPLETED SILICON ON INSULATOR; PARTIALLY DEPLETED SILICON ON INSULATOR; SEMICONDUCTOR DEVICE MEASUREMENT; SHORT CHANNEL EFFECT;

MOSFET DEVICES;

EID: 0037560969     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.810471     Document Type: Article

References (32)

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