High-performance low operation power transistor for 45nm node universal applications

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 156-157

  Shima, M ^a   Okabe, K ^a   Yamaguchi, A ^a   Sakoda, T ^a   Kawamura, K ^a   Pidin, S ^a   Okuno, M ^a   Owada, T ^a   Sugimoto, K ^a   Ogura, J ^a   Kokura, H ^a   Morioka, H ^a   Watanabe, T ^a   Isome, T ^a   Okoshi, K ^a   Mori, T ^a   Hayami, Y ^a   Minakata, H ^a   Hatada, A ^a   Shimamune, Y ^a   Katakami, A ^a   Ota, H ^a   Sakuma, T ^a   Miyashita, T ^a   Hosaka, K ^a   Fukutome, H ^a   Tamura, N ^a   Aoyama, T ^a   Sukegawa, K ^a   Nakaishi, M ^a   Fukuyama, S ^a   Nakai, S ^a   Kojima, M ^a   Sato, S ^a   Miyajima, M ^a   Hashimoto, K ^a   Sugii, T ^a   more..

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELASTIC MODULI; ELECTRIC RESISTANCE; HOLE MOBILITY; NICKEL COMPOUNDS; STRAIN MEASUREMENT;

HOLE MOBILITY ENHANCEMENT; JUNCTION PROFILES; PARASITIC RESISTANCE; POWER TRANSISTORS;

MOS DEVICES;

EID: 41149095123     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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3. E. Morifuji et al., Symp. VLSI Tech. Dig., p. 164, 2004
4. S.K.H. Fung et al., Symp. VLSI Tech. Dig., p. 92, 2004
5. B. Tavel et al., Proceedings of ESSD ERC, p. 423, 2005
6. Z. Luo et al., IEDM Tech. Dig., p. 661, 2004
7. F. Boeuf et al., IEDM Tech. Dig., p. 425, 2004
8. S. Nakai et al., IEDM Tech. Dig., p. 425, 2003