Strained-silicon MOSFETs for analog applications: Utilizing a supercritical-thickness strained layer for low leakage current and high breakdown voltage

IEEE Transactions on Electron Devices

Volumn 53, Issue 5, 2006, Pages 1226-1234

  Kondo, Masao ^a   Sugii, Nobuyuki ^b   Miyamoto, Masafumi ^b   Hoshino, Yutaka ^a   Hatori, Makoto ^a   Hirasawa, Wataru ^c   Kimura, Yoshinobu ^b   Kimura, Shin'ichiro ^b   Kondo, Yasuichi ^a   Yoshida, Isao ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b HITACHI LTD   (Japan)

^c Renesas Eastern Japan Semiconductor Inc   (Japan)

Author keywords

Breakdown voltage; Critical thickness; SiGe; Strained silicon

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; TRANSCONDUCTANCE;

CRITICAL THICKNESS; STRAINED SILICON; SUPERCRITICAL-THICKNESS STRAINED LAYER;

MOSFET DEVICES;

EID: 33646042907     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.872892     Document Type: Article

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