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Volumn 22, Issue 4, 2007, Pages 404-407

Investigation of analogue performance for process-induced-strained PMOSFETs

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; DRAIN CURRENT; GAIN CONTROL; MICROPROCESSOR CHIPS; TRANSCONDUCTANCE;

EID: 34047224487     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/4/019     Document Type: Article
Times cited : (6)

References (21)
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  • 2
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  • 3
    • 8344236776 scopus 로고    scopus 로고
    • A 90-nm logic technology featuring strained-Silicon
    • Thompson S E et al 2004 A 90-nm logic technology featuring strained-Silicon IEEE Trans. Electron Devices 51 1790-7
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    • Thompson, S.E.1    Al, E.2
  • 4
    • 20544447617 scopus 로고    scopus 로고
    • Key differences for process-induced uniaxial versus substrate-induced biaxial stressed Si and Ge channel MOSFETs
    • Thompson S E, Sun G, Wu K, Lim J and Nishida T 2004 Key differences for process-induced uniaxial versus substrate-induced biaxial stressed Si and Ge channel MOSFETs IEDM Tech. Dig. pp 221-7
    • (2004) IEDM Tech. Dig. , pp. 221-227
    • Thompson, S.E.1    Sun, G.2    Wu, K.3    Lim, J.4    Nishida, T.5
  • 6
    • 34047237562 scopus 로고    scopus 로고
    • Stress proximity technique for performance improvement with dual stress linear at 45nm technology and beyond
    • Chen X et al 2006 Stress proximity technique for performance improvement with dual stress linear at 45nm technology and beyond VLSI Symp. Tech. Dig. pp 8.1.1-8.1.2
    • (2006) VLSI Symp. Tech. Dig. , pp. 811-812
    • Chen, X.1    Al, E.2
  • 7
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    • High-performance low operation power transistor for 45nm node universal applications
    • Shima M et al 2006 High-performance low operation power transistor for 45nm node universal applications VLSI Symp. Tech. Dig. pp 19.3.1-19.3.2
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    • Shima, M.1    Al, E.2
  • 8
    • 33644613512 scopus 로고    scopus 로고
    • Strained ultrahigh performance fully depleted nMOSFETs with ft of 330 GHz and sub-30-nm gate lengths
    • Singh D V, Jenkins K A, Sleight J, Ren Z, Ieong M and Haensch W 2006 Strained ultrahigh performance fully depleted nMOSFETs with ft of 330 GHz and sub-30-nm gate lengths IEEE Electron Device Lett 27 191-3
    • (2006) IEEE Electron Device Lett , vol.27 , Issue.3 , pp. 191-193
    • Singh, D.V.1    Jenkins, K.A.2    Sleight, J.3    Ren, Z.4    Ieong, M.5    Haensch, W.6
  • 11
    • 20444485784 scopus 로고    scopus 로고
    • Superior hot carrier reliability of single halo (SH) silicon-on-insulator (SOI) nMOSFET in analog applications
    • Hakim N, Rao V R, Vasi J and Woo J C S 2005 Superior hot carrier reliability of single halo (SH) silicon-on-insulator (SOI) nMOSFET in analog applications IEEE Trans. Device Mater. Reliab. 5 127-32
    • (2005) IEEE Trans. Device Mater. Reliab. , vol.5 , Issue.1 , pp. 127-132
    • Hakim, N.1    Rao, V.R.2    Vasi, J.3    Woo, J.C.S.4
  • 12
    • 0037560969 scopus 로고    scopus 로고
    • Influence of device engineering on the analog and RF performance of SOI MOSFETs
    • Kilchytska V et al 2003 Influence of device engineering on the analog and RF performance of SOI MOSFETs IEEE Trans. Electron Devices 50 577-88
    • (2003) IEEE Trans. Electron Devices , vol.50 , Issue.3 , pp. 577-588
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  • 13
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    • Chen W P N, Su P, Wang J S, Chang C H, Goto K and Diaz C H 2006 A new series resistance and mobility extraction method by BSIM model for nano-scale MOSFETs VLSI-TSA Tech. Dig. pp 143-4
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.