Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(1 1 2̄ 0)

Journal of Crystal Growth

Volumn 311, Issue 1, 2008, Pages 72-78

  Bishop, S M ^a   Reynolds Jr , C L ^a   Liliental Weber, Z ^b   Uprety, Y ^b   Ebert, C W ^c   Stevie, F A ^d   Park, J S ^a   Davis, R F ^e  

^a North Carolina State University   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c Apogee Photonics   (United States)

^d NORTH CAROLINA STATE UNIVERSITY   (United States)

^e CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

A1. Characterization; A3. Chemical vapor deposition processes; A3. Hot wall epitaxy; B1. Silicon carbide; B2. Semiconducting materials

Indexed keywords

ACTIVATION ENERGY; CRYSTAL GROWTH; EPITAXIAL GROWTH; EPITAXIAL LAYERS; FILM GROWTH; GAS PERMEABLE MEMBRANES; GROWTH (MATERIALS); LOW PRESSURE CHEMICAL VAPOR DEPOSITION; OPTICAL ENGINEERING; PHASE INTERFACES; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBLIMATION; TWO DIMENSIONAL; VAPOR DEPOSITION; VAPORS;

A1. CHARACTERIZATION; A3. CHEMICAL VAPOR DEPOSITION PROCESSES; A3. HOT-WALL EPITAXY; B1. SILICON CARBIDE; B2. SEMICONDUCTING MATERIALS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 57649171434     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.200     Document Type: Article

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