High growth rate (up to 20 μm/h) SiC epitaxy in a horizontal hot-wall reactor

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 77-80

  Zhang, Jie ^a   Mazzola, Janice ^a   Hoff, Carl ^a   Koshka, Yaroslav ^b   Casady, Jeff ^a  

^a SemiSouth Laboratories Inc   (United States)

^b MISSISSIPPI STATE UNIVERSITY   (United States)

Author keywords

High growth rate; Horizontal hot wall; Silicon carbide; Thick epitaxy

Indexed keywords

EPILAYERS; EPITAXIAL GROWTH; FLOW OF GASES; SILICON CARBIDE; SURFACE MORPHOLOGY;

EPILAYER GROWTH; HIGH GROWTH RATE; HOT WALL REACTOR; THICK EPITAXY;

GROWTH RATE;

EID: 28144437684     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.77     Document Type: Conference Paper

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