Growth and characterisation of thick SiC epilayers by high temperature CVD

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 103-106

  Ellison, A ^a   Kimoto, T ^a   Ivanov, I G ^a,b   Wahab, Q ^b   Henry, A ^a,b   Kordina, O ^a,b,c   Zhang, J ^a   Hemmingsson, C G ^a   Gu, C Yu ^b   Leys, M R ^d   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b ABB CORPORATE RESEARCH   (Sweden)

^c Okmetic Oyj   (Finland)

^d EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Deep Levels; High Temperature CVD; Schottky Device; Shallow Dopants

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL IMPURITIES; EPITAXIAL GROWTH; HEAT TRANSFER; HIGH TEMPERATURE OPERATIONS; MORPHOLOGY; NUCLEATION; SEMICONDUCTING SILICON COMPOUNDS;

HIGH TEMPERATURE CHEMICAL VAPOR DEPOSITION (HTCVD); SCHOTTKY RECTIFIERS;

SILICON CARBIDE;

EID: 0004751574     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.103     Document Type: Article

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