Fast epitaxial growth of 4H-SiC by chimney-type vertical hot-wall chemical vapor deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 4 B, 2001, Pages

  Kimoto, T ^a   Tamura, S ^a   Chen, Y ^a   Fujihira, K ^a   Matsunami, H ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Chemical vapor deposition; Deep level; Silicon carbide; Surface morphology; Uniformity

Indexed keywords

ACTIVATION ENERGY; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPING (ADDITIVES); EPITAXIAL GROWTH; PARAMAGNETIC RESONANCE; SURFACES;

ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY (ICTS);

SILICON CARBIDE;

EID: 0035870366     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l374     Document Type: Article

References (18)