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Journal of Crystal Growth

Volumn 183, Issue 4, 1998, Pages 581-593

Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy

(4) Kern, R S a,d Tanaka, S b,d Rowland, L B c,d Davis, R F d

a Product Development Department (United States)

b INST OF PHYS AND CHEMICAL RESEARCH (Japan)

c NORTHROP GRUMMAN CORPORATION (United States)

d North Carolina State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DEPOSITION; FILM GROWTH; MOLECULAR BEAM EPITAXY; REACTION KINETICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILANES; SUBSTRATES; SURFACE STRUCTURE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE); HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM);

SILICON CARBIDE;

EID: 0032003180 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00471-5 Document Type: Article

Times cited : (7)

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