Growth of thick epitaxial 4H-SiC layers by chemical vapor deposition

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 107-110

  Kordina, O ^a   Irvine, K ^a   Sumakeris, J ^a   Kong, H S ^a   Paisley, M J ^a   Carter Jr , C H ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

CVD; Doping Uniformity; Hot Wall; Reproducibility; Thick Layers; Thickness Uniformity

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL IMPURITIES; EPITAXIAL GROWTH; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES;

HOT WALL TYPE REACTORS; RESIDUAL BACKGROUND IMPURITIES;

SILICON CARBIDE;

EID: 0031673027     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.107     Document Type: Article

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