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Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 249-252

Simple model for calculation of SiC epitaxial layers growth rate in vacuum

(5) Davydov, S Yu a Savkina, N S a Lebedev, A A a Syvajarvi, M b Yakimova, R b

a IOFFE INSTITUTE (Russian Federation)

b LINKÖPING UNIVERSITY (Sweden)

Author keywords

Growth rate; SiC; Simple model; Sublimation epitaxy; Vacuum

Indexed keywords

COMPUTER SIMULATION; DIODES; EPITAXIAL GROWTH; MONTE CARLO METHODS; SUBLIMATION; THIN FILMS;

GROWTH RATE; SIMPLE MODEL; STICKING COEFFICIENT; SUBLIMATION EPITAXY;

SILICON CARBIDE;

EID: 8644230169 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.457-460.249 Document Type: Conference Paper

Times cited : (3)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.