Electrochemical C-V profiling of n-type 4H-SiC

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 681-684

  Zekentes, K ^a   Kayambaki, M ^a   Mousset, S ^a  

^a INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

C V measurements; Doping profile; Electrolytic etching; Porous 4H SiC layer

Indexed keywords

CAPACITANCE; CHARGE TRANSFER; CURRENT DENSITY; DOPING (ADDITIVES); ELECTRIC POTENTIAL; ELECTROCHEMISTRY; ELECTROLYSIS; EPITAXIAL GROWTH; ETCHING; LIGHTING; OPTIMIZATION; SCHOTTKY BARRIER DIODES;

C-V MEASUREMENTS; DOPING PROFILES; ELECTROLYTIC ETCHING; POROUS 4H-SIC LAYER;

SILICON CARBIDE;

EID: 8744226842     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.681     Document Type: Conference Paper

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