Crystal growth of silicon carbide in hydrogen atmosphere by sublimation close space technique

Journal of Crystal Growth

Volumn 237-239, Issue 1-4 II, 2002, Pages 1235-1238

  Furusho, T ^a   Lilov, S K ^a   Ohshima, S ^a   Nishino, S ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A1. Growth models; A2. Growth from vapor; A2. Single crystal growth; A3 Sublimation epitaxy; A3. Vapor phase epitaxy; B1. Silicon Carbide

Indexed keywords

HYDROGEN; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; SINGLE CRYSTALS; SUBLIMATION;

SUBLIMATION CLOSE SPACE TECHNIQUE;

VAPOR PHASE EPITAXY;

EID: 0036531126     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02178-9     Document Type: Article

References (5)