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Volumn 104, Issue 9, 2008, Pages

Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon

(9) Garcia H a Dueas, S a Castan H a Gomez A a Bailon L a Toledano Luque, M b Del Prado, A b Martil I b Gonzalez Diaz G b

a UNIVERSITY OF VALLADOLID (Spain)

b UNIVERSIDAD COMPLUTENSE DE MADRID (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CYCLOTRONS; EMISSION SPECTROSCOPY; HAFNIUM; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; METAL INSULATOR BOUNDARIES; MIS DEVICES; NITRIDES; NONMETALS; OXIDE FILMS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON NITRIDE; SUBSTRATES; TRANSIENTS;

CAPACITANCE VOLTAGES; DETRAPPING MECHANISMS; ELECTRICAL CHARACTERIZATIONS; EMISSION MODELS; FLATBAND VOLTAGES; HAFNIUM OXIDE FILMS; INTERFACE LAYERS; INTERFACE QUALITIES; INTERFACE TRAP DENSITIES; INTERFACIAL LAYERS; INTERLAYER TRAPPING; LOW FREQUENCIES; ORDERS OF MAGNITUDES; SEMICONDUCTOR CAPACITORS; SILICON SUBSTRATES; SIMULTANEOUS MEASUREMENTS; TRANSIENT SPECTROSCOPIES; TRAPPING/DETRAPPING;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 56349108648 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3013441 Document Type: Article

Times cited : (23)

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