Interfacial State Density and Conductance-Transient Three-Dimensional Profiling of Disordered-Induced Gap States on Metal Insulator Semiconductor Capacitors Fabricated from Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiOxNyHz Films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 8, 2003, Pages 4978-4981

  Castán, Helena ^a   Dueñas, Salvador ^a   Barbolla, Juan ^a   Del Prado, Álvaro ^b   Mártil, Ignacio ^b   González Díaz, Germán ^b  

^a UNIVERSITY OF VALLADOLID   (Spain)

^b UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

Conductance transients; DLTS; ECR PECVD; Insulator damage; Interface states; MIS structures; Oxynitrides

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRON CYCLOTRON RESONANCE; METAL INSULATOR BOUNDARIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS; SILICON; SPECTROSCOPIC ANALYSIS; THERMAL EFFECTS;

INTERFACIAL STATE DENSITIES;

CAPACITORS;

EID: 18844474632     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.4978     Document Type: Article

References (15)

1. S. V. Hattangady, H. Niimi and G. Lucovsky: J. Vac. Sci. Technol. A 14 (1996) 3017.
2. J. I. Yeh and S. C. Lee: J. Appl. Phys. 79 (1996) 656.
3. P. V. Bulkin, P. L. Swart and B. M. Lacquet: J. Non-Cryst. Solids 187 (1995) 484.
4. T. T. Chau, S. R. Mejia and K. C. Kao: J. Vac. Sci. Technol. B 10 (1992) 2170.
5. P. K. Shufflebotham, D. J. Thomson and H. C. Card: J. Appl. Phys. 64 (1988) 4398.
6. A. Popov: J. Vac. Sci. Technol. A 7 (1989) 894.
7. A. Prado, F. L. Martínez, I. Mártil, G. González-Díaz and M. Fernández: J. Vac. Sci. Technol. A 17 (1999) 1263.
8. A. Prado, I. Mártil, M. Fernández and G. González-Díazi: Thin Solid Films 343-344 (1999) 437.
9. L. He, H. Hasegawa, T. Sawada and H. Ohno: J. Appl. Phys. 63 (1988) 2120.
10. L. He, H. Hasegawa, T. Sawada and H. Ohno: Jpn. J. Appl. Phys. 27 (1988) 512.
11. E. H. Nicollian and J. R. Brews: MOS Physics and Technology (John Wiley & Sons, New York, 1982) Chap. 8.
12. S. Dueñas, R. Peláez, H. Castán, R. Pinacho, L. Quintanilla, J. Barbolla, I. Mártil and G. González-Díaz: Appl. Phys. Lett. 71 (1997) 826.
13. H. Castán, S. Dueñas, J. Barbolla, E. Redondo, N. Blanco, I. Mártil and G. González-Díaz: Microelectron. Reliab. 40 (2000) 845.
14. H. Castán, S. Dueñas and J. Barbolla: Jpn. J. Appl. Phys. 41 (2002) L1215.
15. T. Sakurai and T. Sugano: J. Appl. Phys. 52 (1981) 2889.