Electrical properties of high-pressure reactive sputtered thin hafnium oxide high-k gate dielectrics

Semiconductor Science and Technology

Volumn 22, Issue 12, 2007, Pages 1344-1351

  Dueas S ^a   Castan H ^a   Garcia H ^a   Gomez A ^a   Bailon L ^a   Toledano Luque, M ^b   Martil I ^b   Gonzalez Diaz G ^b  

^a UNIVERSITY OF VALLADOLID   (Spain)

^b UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; DEPOSITION; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; POLYCRYSTALLINE MATERIALS; SPUTTERING;

HIGH PRESSURE REACTIVE SPUTTERING; SPUTTERED PARTICLES;

THIN FILMS;

EID: 36448957228     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/12/019     Document Type: Article

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