Thermal stability and crystallization kinetics of sputtered amorphous Si3N4 films

Thin Solid Films

Volumn 450, Issue 2, 2004, Pages 346-351

  Schmidt, H ^a   Gruber, W ^a   Borchardt, G ^a   Bruns, M ^b   Rudolphi, M ^c   Baumann, H ^c  

^a CLAUSTHAL UNIVERSITY OF TECHNOLOGY   (Germany)

^b KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

^c GOETHE UNIVERSITY   (Germany)

Author keywords

Amorphous materials; Crystallization; Silicon nitride; Sputtering

Indexed keywords

ANNEALING; CRYSTALLIZATION; ENTHALPY; GRAIN GROWTH; INTERFACES (MATERIALS); MAGNETRON SPUTTERING; MICROSTRUCTURE; POLYCRYSTALLINE MATERIALS; RATE CONSTANTS; SILICON CARBIDE; SILICON NITRIDE; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINE FILMS; POLYMORPHIC MODIFICATIONS;

AMORPHOUS FILMS;

EID: 1242321014     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.11.274     Document Type: Article

References (35)

1. Hampshire S. Swain M., Cahn R.W., Haasen P., Kramer E.J. Materials Science and Technology. 11:1994;122 Wiley-VCH, Weinheim.
2. Riley F.L. J. Am. Ceram. Soc. 83:2000;245.
3. Bonnel D.A., Tien T.Y. Preparation and Properties of Silicon Nitride-Based Materials, Materials Science Forum. 47:1989;Trans Tech Publ, Aedermannsdorf.
4. Agnihotri O.P., Jain S.C., Poortmans J., Szlufcik J., Beaucarne G., Nijs J., Mertens R. Semicond. Sci. Technol. 15:2000;R29.
5. Habraken F.H.P.M., Kuiper A.E.T. Mater. Sci. Eng. Rep. 12:1994;123.
6. Löbel H.P., Huppertz M. Thin Solid Films. 317:1998;153.
7. Kim J.H., Chung K.W. J. Appl. Phys. 83:1998;5831.
8. Mogab C.J., Petroff P.M., Sheng T.T. J. Electrochem. Soc. 122:1975;815.
9. Seikawa T., Okamoto A. J. Electrochem. Soc. 131:1984;2928.
10. Stedile F.C., Baumvol I.J.R., Schreiner W.H., Freire F.L. Jr. J. Vac. Sci. Technol. A. 12:1994;462.
11. Patra S.K., Mohan Rao G. Mater. Sci. Eng. B. 90:2002;90.
12. Yamada T., Kawahito T., Iwai T. J. Mater. Sci. Lett. 2:1983;275.
13. Shimada M., Ogawa N., Dachille F., Roy R. Am. Ceram. Soc. Bull. 58:1979;519.
14. Seher M., Bill J., Aldinger F., Riedel R. J. Cryst. Growth. 137:1994;452.
15. Lutz H., Bruns M., Link F., Baumann H. Thin Solid Films. 332:1998;230.
16. J. Kempter, diploma thesis, Universität Frankfurt am Main, Germany, 1997.
17. Doolittle L.R. Nucl. Instrum. Methods B. 15:1986;227.
18. Kraus W., Nolze G. J. Appl. Cryst. 29:1996;301.
19. Villars P., Calvert L.D. Pearson's Handbook of Crystallographic Data for Intermetallic Phases. 1991;ASM International, Materials Park, Ohio.
20. Carlson O.N. Bull. Alloy Phase Diagrams. 11:1990;569.
21. Liang J., Topor L., Navrotsky A., Mitomo M. J. Mater. Res. 14:1999;1959.
22. Grün R. Acta Crystallogr. B. 35:1979;800.
23. Suematsu H., Mitomo M., Mitchell T.E., Petrovic J.J., Fukunaga O., Ohashi N. J. Am. Ceram. Soc. 80:1997;615.
24. Li Y.- L., Liang Y., Zheng F., Ma X.-F., Cui S.-J., Sun L. J. Mater. Res. 16:2001;67.
25. Ching W., Xu Y., Gale J.D., Ruhle M. J. Am. Ceram. Soc. 81:1998;3199.
26. Scherrer P. Göttinger Nachr. Math. Phys. 2:1918;98.
27. Klug H.P., Alexander L.E. X-Ray Procedures for Polycrystalline and Amorphous Materials. 1974;618 Whiley and Sons, New York.
28. Williamson G.K., Hall W.H. Acta Mater. 1:1953;22.
29. Avrami M. J. Chem. Phys. 7:1939;416.
30. Avrami M. J. Chem. Phys. 8:1940;212.
31. Avrami M. J. Chem. Phys. 9:1941;177.
32. Johnson W.A., Mehl R. Trans. AIME. 135:1939;416.
33. Kolmogorov A.N. Isz. Akad. Nauk SSR Ser. Fiz. 3:1937;355.
34. Christian J.W. The Theory of Transformations in Metals and Alloys. 1975;Pergamon Press, Oxford.
35. Christian J.W. Cahn R.W. Physical Metallurgy. 1965;443 North Holland, Amsterdam.