Thermally assisted hole tunneling at the interface and the energy-band diagram of metal-nitride-oxide-semiconductor structures

Physical Review B - Condensed Matter and Materials Physics

Volumn 57, Issue 4, 1998, Pages R2081-R2083

  Gritsenko, V ^a   Meerson, E ^a   Morokov, Yu N ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b INSTITUTE OF COMPUTATIONAL TECHNOLOGIES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000535841     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.57.R2081     Document Type: Article

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