Structures of clean and oxygen-adsorbed SiC(0 0 0 1)-(3 × 3) surfaces

Surface Science

Volumn 602, Issue 21, 2008, Pages 3253-3257

  Hoshino, Y ^a   Okawa, T ^b   Shibuya, M ^b   Nishimura, T ^b   Kido, Y ^b  

^a KANAGAWA UNIVERSITY   (Japan)

^b RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

Medium energy ion scattering; Photoelectron spectroscopy; Silicon carbide; Surface chemical reaction; Surface structure

Indexed keywords

ATOMIC PHYSICS; ATOMS; CHEMICAL OXYGEN DEMAND; CHEMICAL REACTIONS; ELECTRON SPECTROSCOPY; LINGUISTICS; NONMETALS; OXIDATION; OXYGEN; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTOIONIZATION; PHOTONS; PLASMA INTERACTIONS; SILICON; SILICON CARBIDE; SILICON COMPOUNDS; SPECTRUM ANALYSIS; SULFUR COMPOUNDS; SURFACE REACTIONS;

CORE LEVELS; HIGH-RESOLUTION; INITIAL OXIDATIONS; MEDIUM ENERGIES; MEDIUM ENERGY ION SCATTERING; OXIDATION STATES; RECONSTRUCTED SURFACES; ROOM TEMPERATURES; SIC(0 0 0 1); SURFACE CHEMICAL REACTION; TETRAMER;

SURFACE STRUCTURE;

EID: 54249109813     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2008.08.020     Document Type: Article

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