Atomic and electronic structures of 6H-SiC (0 0 0 over(1, ̄)) - 3 × 3 surfaces

Surface Science

Volumn 601, Issue 10, 2007, Pages 2203-2213

  Takeuchi, F ^a   Fukuyama, R ^a   Hoshino, Y ^b   Nishimura, T ^a   Kido, Y ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

Medium energy ion scattering; Reflection high energy electron diffraction; Silicon carbide; Surface structure; Synchrotron radiation photoelectron spectroscopy

Indexed keywords

ANNEALING; CRYSTAL ATOMIC STRUCTURE; ELECTRONIC STRUCTURE; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SURFACE CHEMISTRY; VALENCE BANDS;

HIGH-RESOLUTION MEDIUM ENERGY ION SCATTERING; MEDIUM ENERGY ION SCATTERING; SURFACE-RELATED COMPONENTS;

SILICON CARBIDE;

EID: 34247871205     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2007.03.035     Document Type: Article

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