Core level and valence band photoemission study of the (1 1 1) and (1̄ 1̄ 1̄) surfaces of 3C-SiC

Surface Science

Volumn 470, Issue 3, 2001, Pages 284-292

  Glans, P A ^a   Balasubramanian, T ^b   Syvajarvi M ^a   Yakimova, R ^a   Johansson, L I ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CRYSTAL ORIENTATION; ELECTRIC POTENTIAL; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; HEATING; LOW ENERGY ELECTRON DIFFRACTION; PHOTOEMISSION; SILICON CARBIDE; SINGLE CRYSTALS; SYNCHROTRON RADIATION;

ANGLE RESOLVED PHOTOEMISSION; LOW INDEX SINGLE CRYSTAL SURFACES; SYNCHROTRON RADIATION PHOTOELECTRON SPECTROSCOPY; VALENCE BAND PHOTOEMISSION;

SEMICONDUCTING FILMS;

EID: 0035127651     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(00)00869-4     Document Type: Article

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