Initial nitride formation at Si3C-SiC (100) 3×2 interface by oxynitridation

Applied Physics Letters

Volumn 87, Issue 19, 2005, Pages 1-3

  Radtke, C ^a   Enriquez, H ^a   Arnault, J C ^a,c   Soukiassian, P ^a   Moras, P ^b   Crotti, C ^b   Perfetti, P ^b  

^a DIF   (France)

^b CNR   (Italy)

^c INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION; INTERFACES (MATERIALS); NITRIDES; PASSIVATION; PHOTOEMISSION; SPECTROSCOPIC ANALYSIS; STOICHIOMETRY; SYNCHROTRON RADIATION;

DEFECT PASSIVATION; DOPANT DIFFUSION; LAYER FORMATION; PHOTOEMISSION SPECTROSCOPY;

SILICON CARBIDE;

EID: 27644533319     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2130714     Document Type: Article

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