High-frequency noise performance of 60-nm gate-length FinFETs

IEEE Transactions on Electron Devices

Volumn 55, Issue 10, 2008, Pages 2718-2727

  Raskin, Jean Pierre ^a   Pailloncy, Guillaume ^b   Lederer, Dimitri ^c   Danneville, François ^d   Dambrine, Gilles ^d   Decoutere, Stefaan ^e   Mercha, Abdelkarim ^e   Parvais, Bertrand ^e  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^b NMDG Engineering Bvba   (Belgium)

^c Farran Technology Ltd   (Ireland)

^d INSTITUT D ELECTRONIQUE   (France)

^e IMEC   (Belgium)

Author keywords

FinFETs; High frequency noise; Microwave characterization; S parameters; Small signal modeling

Indexed keywords

FINFETS; HIGH-FREQUENCY NOISE; MICROWAVE CHARACTERIZATION; S-PARAMETERS; SMALL-SIGNAL MODELING;

FINS (HEAT EXCHANGE);

EID: 53649106828     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2003097     Document Type: Article

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