Comparative analysis of the RF and noise performance of bulk and single-gate ultra-thin SOI MOSFETs by numerical simulation

Solid-State Electronics

Volumn 48, Issue 4, 2004, Pages 543-549

  Eminente, Simone ^a   Alessandrini, Marco ^a   Fiegna, Claudio ^a,b  

^a UNIVERSITY OF FERRARA   (Italy)

^b ARCES Center   (Italy)

Author keywords

Device simulation; MOSFET; Noise; Radio Frequency; SOI

Indexed keywords

COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC CURRENTS; ELECTRIC INSULATORS; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; GATES (TRANSISTOR); MATHEMATICAL MODELS; QUANTUM THEORY; SILICON WAFERS; THERMAL NOISE;

DEVICE SIMULATION; RADIO FREQUENCY;

MOSFET DEVICES;

EID: 0442296355     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.09.022     Document Type: Conference Paper

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