Analysis of geometry-dependent parasitics in multifin double-gate FinFETs

IEEE Transactions on Electron Devices

Volumn 54, Issue 4, 2007, Pages 692-698

  Wu, Wen ^a   Chan, Mansun ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Cutoff frequency; Double gate (DG); Fin field effect transistor (FinFET); Gate resistance; Maximum oscillation frequency; Radio frequency (RF); Resistance capacitance (RC) delay

Indexed keywords

CAPACITANCE; CONFORMAL MAPPING; CUTOFF FREQUENCY; ELECTRIC RESISTANCE; MATHEMATICAL MODELS;

DOUBLE GATE; FIN FIELD-EFFECT TRANSISTOR; RADIO FREQUENCY; RESISTANCE-CAPACITANCE DELAY;

FIELD EFFECT TRANSISTORS;

EID: 34147183634     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.891252     Document Type: Article

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