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Volumn 2005, Issue , 2005, Pages 97-100

High frequency low noise potentialities of down to 65nm technology nodes MOSFETs

Author keywords

[No Author keywords available]

Indexed keywords

GAIN CONTROL; MICROWAVE DEVICES; NATURAL FREQUENCIES; SPURIOUS SIGNAL NOISE;

EID: 33847301622     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (11)

References (15)
  • 1
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    • Noise Investigations of 90 nm VLSI Technologies for Analog Integrated Circuits at Millimeter Wave Frequencies
    • Ellinger F. and al, Noise Investigations of 90 nm VLSI Technologies for Analog Integrated Circuits at Millimeter Wave Frequencies, in Proc. of SPIE, Noise in Devices and Circuits 2004, Vol. 5470, pp; 131-140.
    • (2004) Proc. of SPIE, Noise in Devices and Circuits , vol.5470 , pp. 131-140
    • Ellinger, F.1    and al2
  • 2
    • 1642365005 scopus 로고    scopus 로고
    • 26-42 GHz SOI CMOS Low Noise Amplifier
    • March
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    • Ellinger, F.1
  • 3
    • 0036160849 scopus 로고    scopus 로고
    • High-performance fully-depleted SOI RF CMOS
    • January
    • Chen C.L. and al "High-performance fully-depleted SOI RF CMOS", IEEE Electron Device Letters, vol. 23, no. 1, pp. 52-54, January 2002.
    • (2002) IEEE Electron Device Letters , vol.23 , Issue.1 , pp. 52-54
    • Chen, C.L.1    and al2
  • 4
    • 0035715830 scopus 로고    scopus 로고
    • max realized at 0.18 nm gate length in an industrial RF-CMOS technology
    • max realized at 0.18 nm gate length in an industrial RF-CMOS technology", IEDM'01 Technical Digest, pp. 223-226.
    • IEDM'01 Technical Digest , pp. 223-226
    • Tiemeijer, L.F.1    and al2
  • 5
    • 0034790451 scopus 로고    scopus 로고
    • A 0.13-nm SOI CMOS Technology for low-power Digital and RF Applications
    • Zamdmer N. and al "A 0.13-nm SOI CMOS Technology for low-power Digital and RF Applications", 2001 Symposium on VLSI Technology Digest, pp. 85-86.
    • 2001 Symposium on VLSI Technology Digest , pp. 85-86
    • Zamdmer, N.1    and al2
  • 6
    • 0036456385 scopus 로고    scopus 로고
    • max and 0.8 dB NFmin @ 6 GHz for SOC, IEEE International SOI Conference, Wiliamsburg, VA, October 7-10, 2002.
    • max and 0.8 dB NFmin @ 6 GHz for SOC", IEEE International SOI Conference, Wiliamsburg, VA, October 7-10, 2002.
  • 8
    • 18144443346 scopus 로고    scopus 로고
    • max with dual offset-implanted source-drain extension structure for RF/analog and logic applications
    • max with dual offset-implanted source-drain extension structure for RF/analog and logic applications", IEDM'01 Technical Digest, pp. 219-222.
    • IEDM'01 Technical Digest , pp. 219-222
    • Matsumoto, T.1    and al2
  • 9
    • 0035367153 scopus 로고    scopus 로고
    • Cutoff frequency and propagation delay time of 1.5-nm gate oxide CMOS
    • June
    • Momose H.S. and al "Cutoff frequency and propagation delay time of 1.5-nm gate oxide CMOS", IEEE Transaction on Electron Devices, vol. 48, no. 6, pp. 1165-1174, June 2001.
    • (2001) IEEE Transaction on Electron Devices , vol.48 , Issue.6 , pp. 1165-1174
    • Momose, H.S.1    and al2
  • 10
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    • Suitability of scaled SOI CMOS for high-frequency analog circuits, ESSDERC 2002
    • to be published
    • Zamdmer N. and al "Suitability of scaled SOI CMOS for high-frequency analog circuits", ESSDERC 2002, to be published.
    • Zamdmer, N.1    and al2
  • 11
    • 0035714396 scopus 로고    scopus 로고
    • High performance sub-40 nm CMOS devices on SOI for the 70 nm technology node
    • Narashima S. and al "High performance sub-40 nm CMOS devices on SOI for the 70 nm technology node", IEDM'01 Technical Digest, pp. 625-627.
    • IEDM'01 Technical Digest , pp. 625-627
    • Narashima, S.1    and al2
  • 12
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    • max 90-nm SOI CMOS SoC technology with low-power millimeter-wave digital and RF circuit capability
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  • 13
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    • Impact of Downscaling on High-Frequency Noise Performance of Bulk and SOI MOSFETs
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  • 14
  • 15
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    • Dambrine G.and al, A new extrinsic equivalent circuit of HEMT's including noise for millimeter-wave circuit design. IEEE-MTT, Vol. 46, Sept. 1998 Page(s):1231-1236.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.