-
1
-
-
4344651640
-
Noise Investigations of 90 nm VLSI Technologies for Analog Integrated Circuits at Millimeter Wave Frequencies
-
Ellinger F. and al, Noise Investigations of 90 nm VLSI Technologies for Analog Integrated Circuits at Millimeter Wave Frequencies, in Proc. of SPIE, Noise in Devices and Circuits 2004, Vol. 5470, pp; 131-140.
-
(2004)
Proc. of SPIE, Noise in Devices and Circuits
, vol.5470
, pp. 131-140
-
-
Ellinger, F.1
and al2
-
2
-
-
1642365005
-
26-42 GHz SOI CMOS Low Noise Amplifier
-
March
-
Ellinger F., 26-42 GHz SOI CMOS Low Noise Amplifier, IEEE Journal of Solid-State Circuits, Vol. 39, n. 3, March 2004
-
(2004)
IEEE Journal of Solid-State Circuits
, vol.39
, Issue.3
-
-
Ellinger, F.1
-
3
-
-
0036160849
-
High-performance fully-depleted SOI RF CMOS
-
January
-
Chen C.L. and al "High-performance fully-depleted SOI RF CMOS", IEEE Electron Device Letters, vol. 23, no. 1, pp. 52-54, January 2002.
-
(2002)
IEEE Electron Device Letters
, vol.23
, Issue.1
, pp. 52-54
-
-
Chen, C.L.1
and al2
-
4
-
-
0035715830
-
max realized at 0.18 nm gate length in an industrial RF-CMOS technology
-
max realized at 0.18 nm gate length in an industrial RF-CMOS technology", IEDM'01 Technical Digest, pp. 223-226.
-
IEDM'01 Technical Digest
, pp. 223-226
-
-
Tiemeijer, L.F.1
and al2
-
5
-
-
0034790451
-
A 0.13-nm SOI CMOS Technology for low-power Digital and RF Applications
-
Zamdmer N. and al "A 0.13-nm SOI CMOS Technology for low-power Digital and RF Applications", 2001 Symposium on VLSI Technology Digest, pp. 85-86.
-
2001 Symposium on VLSI Technology Digest
, pp. 85-86
-
-
Zamdmer, N.1
and al2
-
6
-
-
0036456385
-
-
max and 0.8 dB NFmin @ 6 GHz for SOC, IEEE International SOI Conference, Wiliamsburg, VA, October 7-10, 2002.
-
max and 0.8 dB NFmin @ 6 GHz for SOC", IEEE International SOI Conference, Wiliamsburg, VA, October 7-10, 2002.
-
-
-
-
8
-
-
18144443346
-
max with dual offset-implanted source-drain extension structure for RF/analog and logic applications
-
max with dual offset-implanted source-drain extension structure for RF/analog and logic applications", IEDM'01 Technical Digest, pp. 219-222.
-
IEDM'01 Technical Digest
, pp. 219-222
-
-
Matsumoto, T.1
and al2
-
9
-
-
0035367153
-
Cutoff frequency and propagation delay time of 1.5-nm gate oxide CMOS
-
June
-
Momose H.S. and al "Cutoff frequency and propagation delay time of 1.5-nm gate oxide CMOS", IEEE Transaction on Electron Devices, vol. 48, no. 6, pp. 1165-1174, June 2001.
-
(2001)
IEEE Transaction on Electron Devices
, vol.48
, Issue.6
, pp. 1165-1174
-
-
Momose, H.S.1
and al2
-
10
-
-
0041947475
-
Suitability of scaled SOI CMOS for high-frequency analog circuits, ESSDERC 2002
-
to be published
-
Zamdmer N. and al "Suitability of scaled SOI CMOS for high-frequency analog circuits", ESSDERC 2002, to be published.
-
-
-
Zamdmer, N.1
and al2
-
11
-
-
0035714396
-
High performance sub-40 nm CMOS devices on SOI for the 70 nm technology node
-
Narashima S. and al "High performance sub-40 nm CMOS devices on SOI for the 70 nm technology node", IEDM'01 Technical Digest, pp. 625-627.
-
IEDM'01 Technical Digest
, pp. 625-627
-
-
Narashima, S.1
and al2
-
12
-
-
4544286733
-
max 90-nm SOI CMOS SoC technology with low-power millimeter-wave digital and RF circuit capability
-
Digest of Technical Papers, June 15-17, Pages
-
max 90-nm SOI CMOS SoC technology with low-power millimeter-wave digital and RF circuit capability, 2004 Symposium on VLSI Technology, Digest of Technical Papers., June 15-17, 2004, Pages:98-99.
-
(2004)
2004 Symposium on VLSI Technology
, pp. 98-99
-
-
Zamdmer, N.1
and al2
-
13
-
-
5444234970
-
Impact of Downscaling on High-Frequency Noise Performance of Bulk and SOI MOSFETs
-
Pailloncy G. and al Impact of Downscaling on High-Frequency Noise Performance of Bulk and SOI MOSFETs. IEEE Trans. Electron. Devices, 51, 10, pp.1605-1612, 2004.
-
(2004)
IEEE Trans. Electron. Devices
, vol.51
, Issue.10
, pp. 1605-1612
-
-
Pailloncy, G.1
and al2
-
14
-
-
0023844609
-
Noise modelling and measurement techniques
-
January
-
Cappy A. "Noise modelling and measurement techniques," IEEE Transactions on Microwave Theory and Techniques, vol. 36, no. 1, pp. 1-10, January 1988.
-
(1988)
IEEE Transactions on Microwave Theory and Techniques
, vol.36
, Issue.1
, pp. 1-10
-
-
Cappy, A.1
-
15
-
-
0032166730
-
-
Dambrine G.and al, A new extrinsic equivalent circuit of HEMT's including noise for millimeter-wave circuit design. IEEE-MTT, 46, Sept. 1998 Page(s):1231-1236.
-
Dambrine G.and al, A new extrinsic equivalent circuit of HEMT's including noise for millimeter-wave circuit design. IEEE-MTT, Vol. 46, Sept. 1998 Page(s):1231-1236.
-
-
-
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