Ultrathin-body SOI devices as a CMOS technology downscaling option: RF perspective

IEEE Transactions on Electron Devices

Volumn 53, Issue 5, 2006, Pages 1193-1199

  Nuttinck, Sebastien ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

CMOS; Fully depleted silicon on insulator (FDSOI); Quantum confinement; RF; Scaling; Ultrathin body (UTB)

Indexed keywords

CAPACITANCE; ELECTRIC CONDUCTIVITY; GATES (TRANSISTOR); SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; ULTRATHIN FILMS;

FULLY DEPLETED SILICON-ON-INSULATOR; QUANTUM CONFINEMENT; ULTHRATHIN BODY;

CMOS INTEGRATED CIRCUITS;

EID: 33646017732     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.872699     Document Type: Article

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